Characteristics of Field Effect Transistor

It has the advantages of high input resistance (100000000-1000000000 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area, and good thermal stability. It has become a strong competitor to bipolar transistors and power transistors.

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Field effect transistor concept

The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.

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Main characteristic parameters of field-effect transistors

The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.

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Detection of Transient Voltage Suppressing Diode (TVS)

For unipolar TVS and bipolar TVS

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How to determine if a thyristor is damaged

When the thyristor is damaged and needs to be inspected and analyzed for its cause, the core can be removed from the cooling jacket, the core box can be opened, and the chip can be removed to observe the traces after the damage to determine the cause. Below are several common phenomenon analyses.

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YFW佑风微BT137D-800CW TO-252 Product substitution BTA208S-600D

BT137D-800CW TO-252 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics

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